Uniform and High Performance of Monolithically Integrated 1 x 2 Array of Planar Gainas Photodiodes - Electron Devices, IEEE Transactions on

In this article, we describe the fabrication of a monolithically integrated 1 12 array of GaInAs/InP planar photodiodes, which has highly uniform characteristics in dark current, capacitance and crosstalk capacitance, quantum efficiency, and the frequency bandwidth at 3-dB reduction with a deviation of 1%. Besides, each diode on the array exhibits an extremely low dark current of 75 pA, a low capacitance of 2.3 pF and a crosstalk capacitance between adjacent diodes of 0.36 pF, a high quantum efficiency of 95% at 1.3 m and 89% at 1.53 m, the 3-dB frequency of >2 GHz, and a small 1/f noise component over a wide operating voltage range. Also, the diode on the array has a negligible degradation after the burn-in test of 20 V, 200 C, and 20 h.